N-C3n4/Bioclxi1-X S-Type Heterojunction with Enhance Internal Electric Field and Stretching Spatial Charge Separation for Visible Light Photocatalytic Ability
N-C3N4/BiOClxI1-x S-type heterojunctions were fabricated by electrostatic self-assembly, BiOClxI1-x nanosheets with radius of 22nm stacked at surface of g-C3N4. The doping of elements reduced the band gap of g-C3N4 from 2.90eV to 2.03eV, the charge carriers were generated by the transfer of photo-induced electron from N-C3N4 to BiOClxI1-x across the interface under irradiation, which made the separation efficiency of the carrier greatly improved. 20%N-BiOCl0.5I0.5 exhibited high activity, the degradation rate of phenol reached 98.53% with 2.5 h of visible light irradiation. The improvement activity of N-C3N4/BiOClxI1-x was attributed to the formation of S-type heterojunction, the internal electric field based on different Fermi levels between N-C3N4 and BiOClxI1-x, as well as band bending and Coulomb force, which together accelerated spatial separation of photogenerated carriers and orderly electron flow
Year of publication: |
[2022]
|
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Authors: | Xu, Kaixuan ; Zhu, Wei ; He, Hongbing ; Zhao, Xiangbo ; Liu, Shouda ; Zhang, Ting ; Gao, Xiaoming |
Publisher: |
[S.l.] : SSRN |
Saved in:
freely available
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