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~subject:"61.72.S-Impurities in crystals"
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61.72.S-Impurities in crystals
61.72.Cc Kinetics of defect formation and annealing
3
61.72.Ji Point defects (vacancies
1
61.72.uf Ge and Si
1
61.72.uj III–V and II–VI semiconductors
1
64.60.Cn Order-disorder transformations
1
64.60.De Statistical mechanics of model systems
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71.15.Mb Density functional theory
1
71.15.Pd Molecular dynamics calculations
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Growth mechanism
1
atomic force microscopy
1
defect formation
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gradient and other corrections
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interstitials) and defect clusters
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local density approximation
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nonlinear optical materials
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Levasseur-Smith, K.
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Mousseau, N.
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The European Physical Journal B - Condensed Matter and Complex Systems
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Ab initio study of the diffusion mechanisms of gallium in a silicon matrix
Levasseur-Smith, K.
;
Mousseau, N.
- In:
The European Physical Journal B - Condensed Matter and …
64
(
2008
)
2
,
pp. 165-172
Persistent link: https://www.econbiz.de/10009280510
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