CdS semiconductor films prepared by chemical-solution growth have been studied. The technique offers the possibility for better control over the preparation processes, because of the slower rate of deposition. Effect of pH value of the solution and its temperature have been correlated. The...

CdS films, usually, prepared on hot substrate at temperature range from 180 to 220°C. The electrical properties of the films are dependent on many parameters such as film thickness, deposition rate, film structure and substrate temperature. To control all these parameters to get film...