C-Si bonds are formed by boron-doped selective growth at the diamond-SiO 2 interface. Two-dimensional hole gas (2DHG) C-Si diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) using C-Si bonded have low interfacial density of states and high hole mobility can be expected. C-Si...

In this paper, a diamond-silicon (C-Si) interface was constructed on a (111) diamond substrate by annealing the SiO2 gate insulator in the reductive atmosphere. The corresponding metal-oxide-semiconductor field effect transistors (MOSFETs) with the C-Si conductive channel were fabricated. The...