WAN, Y. Z.; XIONG, G. Y.; SONG, F.; LUO, H. L.; HUANG, Y.; … - In: Surface Review and Letters (SRL) 14 (2007) 06, pp. 1103-1106
Crystalline cubic silicon carbide (3C-SiC) surface layers have been prepared by carbon-ion implantation into silicon (100) using a MEVVA ion source and subsequent annealing at 1250°C for 2 h. The obtained films have been characterized by SEM, XRD, and micro-Raman analysis. The effect of...