JIANG, Z. S.; ZHANG, W.; JI, Q.; XU, J.; CHEN, D. J.; … - In: Surface Review and Letters (SRL) 14 (2007) 04, pp. 837-840
Effects of Si3N4 passivation layer on the lattice strain of Al0.22Ga0.78N layer with the thickness of 100 nm has been studied by in situ X-ray diffraction by the temperature range of 25°C–550°C. Results show that the temperature dependence of the strain relaxations can be separated into...