Search Results - subject:"72.10.Di Scattering by phonons"

Electron mobility in wurtzite nitride quantum wells limited by optical-phonons and its pressure effect

Qu, Y.; Ban, S. L. - In: The European Physical Journal B - Condensed Matter and … 69 (2009) 3, pp. 321-329

Persistent link: https://www.econbiz.de/10009280875

Kinetic effects on the transport properties of nanostructured devices investigated by deterministic solutions of the Boltzmann-Poisson system

Auer, C.; Lichtenberger, P.; Schürrer, F. - In: The European Physical Journal B - Condensed Matter and … 70 (2009) 1, pp. 133-143

Persistent link: https://www.econbiz.de/10009281133

Electron mobility for a model Al<Subscript>x</Subscript> Ga<Subscript>1-x</Subscript> As/GaAs heterojunction under pressure

Bai, X. P.; Ban, S. L. - In: The European Physical Journal B - Condensed Matter and … 58 (2007) 1, pp. 31-36

A variational method and a memory function approach are adopted to investigate the electron mobility parallel to the interface for a model Al<Subscript>x</Subscript>Ga<Subscript>1-x</Subscript>As/GaAs heterojunction and its pressure effect by considering optical phonon modes (including both of the bulk longitudinal optical (LO) in the...</subscript></subscript>

Persistent link: https://www.econbiz.de/10009280041