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High electron mobility transistors
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Mathematics and Computers in Simulation (MATCOM)
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Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: a Monte Carlo simulation study
Kalna, K.
;
Asenov, A.
- In:
Mathematics and Computers in Simulation (MATCOM)
62
(
2003
)
3
,
pp. 357-366
High
electron
mobility
transistors
(HEMTs) based on III–V semiconductor materials have been investigated as these …
Persistent link: https://www.econbiz.de/10010749968
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