Pourfath, M.; Kosina, H.; Selberherr, S. - In: Mathematics and Computers in Simulation (MATCOM) 79 (2008) 4, pp. 1051-1059
A deeper understanding of quantum effects in nano-electronic devices helps to improve the functionality and to develop new device types. The performance of carbon nanotube (CNT) field-effect transistor is studied using the non-equilibrium Green’s function (NEGF) formalism. The effects of...