BAHARI, ALI; KHORSHIDI, ZAHRA - In: Surface Review and Letters (SRL) 21 (2014) 06, pp. 1450080-1
at low pressure. Ta/La2O3 film has some hopeful properties as a gate dielectric of logic device. The structure and …, is determined from the absorbance spectra. The obtained results show that Ta/La2O3 film as a good gate dielectric has …