Motivated by impurity-induced magnetic ordering phenomena in spin-gap materials like TlCuCl<Subscript>3</Subscript>, we develop a mean-field theory for strongly disordered antiferromagnets, designed to capture the broad distribution of coupling constants in the effective model for the impurity degrees of freedom....</subscript>

Finite size effects on dynamical heterogeneity are studied in liquid silica with Molecular Dynamics simulations using the BKS potential model. When the system size decreases relaxation times are found to increase in accordance with previous results in finite-size simulations and confined...

Using atomic force microscopy on silica and float glass surfaces, we give evidence that the roughness of melted glass surfaces can be quantitatively accounted for by frozen capillary waves. In this framework the height spatial correlations are shown to obey a logarithmic scaling law; the...

A model of thermal relaxation within localized states based on the extended multiple trapping framework is used to describe the red-shift of the emission maximum intensity as the excitation energy decreases. The model is applied to amorphous hydrogenated silicon (a-Si:H) and to organic-inorganic...

The three-dimensional bimodal random-field Ising model is studied via a new finite temperature numerical approach. The methods of Wang-Landau sampling and broad histogram are implemented in a unified algorithm by using the N-fold version of the Wang-Landau algorithm. The simulations are...

The directed polymer in a 1+3 dimensional random medium is known to present a disorder-induced phase transition. For a polymer of length L, the high temperature phase is characterized by a diffusive behavior for the end-point displacement R<Superscript>2</Superscript> ∼L and by free-energy fluctuations of order ΔF(L)...</superscript>

For honeycomb, square and triangular lattices we consider the groundstate threshold pc of spontaneous absolute magnetization in iso- and anisotropic random +/-J Ising models from so-called uniform classes HCz,SQz,TRz. The class index z(⩾1) gives a fixed number of so-called PAF-bonds on the...

We introduce a simple cellular-network model to explain the capacity of the plants as memory devices. Following earlier observations (Bose (The Nervous Mechanism of Plants, Longmans, London, 1923) and others), we regard the plant as a network in which each of the elements (plant cells) are...