Ternary rare earth oxides are expected to be more promising high-k dielectric materials than conventional binary rare earth oxides due to higher band gap, higher permittivity and good interfacial stability. In the present study, the band alignment and atom thermal diffusion of LaYbO3, a new...

The continuous downscaling of metal oxide semiconductor field effect transistors (MOSFET) on silicon, germanium, GaAs, etc. still demands the creation of new high-k dielectrics with even better material performance. In this research, a new ternary high-k dielectric film, LaSmO3, is deposited...

Patterning materials on hydrophobic polymer substrates have extensive applications in fabricating flexible devices at low cost, while the low transfer efficiency encumbers its advance. This paper provides a facile route to transfer materials onto hydrophobic polymer substrates with high...

Surface crack of CeF3 films generated by thermal stress were characterized by scanning electron microscopy and atom force acoustic microscopy (AFAM). Low frequency (8–18 kHz) acoustic response of films and cracks was measured by AFAM. The low frequency acoustic response is similar to what had...