In the present study, Ta/La2O3 films (La2O3 doped with Ta2O5) as a gate dielectric were prepared using a sol–gel method at low pressure. Ta/La2O3 film has some hopeful properties as a gate dielectric of logic device. The structure and morphology of Ta/La2O3 films were studied using X-ray...

In this paper, the morphology, chemical composition and reactivity of MCM-48 powders impregnated with Ni, Mo or both toward hydrodesulphurization (HDS) of thiophene were characterized. The reactivity of the catalyst was quantitatively compared with a standard industrial catalyst (from...

A simple hydrothermal growth process was developed to deposit conformal manganese oxide nanospheres with a diameter of 10 to 20 nm on mesoporous carbon paper. The coating of nanospheres increased the cyclic-voltammogramic response of carbon paper by a factor of 5 with a slight dependence on the...

Nanosized titanium dioxide particles were engrafted with butyltitanate coupling agent and methylmethacrylate monomer, and the obtained nanocomposite was characterized by Fourier transform infrared spectra and sedimentation test. Ultraviolet-visible light spectroscopy was used to study the...

Up to fourth moment distribution of carbide nanocrystallites produced by duplex treatments of surface nanocrystallization and pulsed plasma electrolytic carbonitriding on AISI 1010 mild steel was investigated by the means of figure analysis with high precision. Skewness and kurtosis study of the...

Growth of Ge, Al and Sb on highly oriented pyrolytic graphite (HOPG) was systematically investigated using in situ scanning tunneling microscopy (STM). At room temperature (RT), three dimensional (3D) clusters of all three elements nucleate and grow at the step edges and defect sites of HOPG....

Hard materials, in particular tungsten carbide (WC) hard material has been used in many industries as cutting tool and abrasive materials. For improving toughness, binders are added into carbide materials. The effect of Co as binder on the mechanical properties in the nanosized WC was discussed....