SU, WEITAO; ZHUANG, QIUHUI; HUO, DEXUAN; LI, BIN - In: Surface Review and Letters (SRL) 19 (2012) 06, pp. 1250064-1
The continuous downscaling of metal oxide semiconductor field effect transistors (MOSFET) on silicon, germanium, GaAs, etc. still demands the creation of new high-k dielectrics with even better material performance. In this research, a new ternary high-k dielectric film, LaSmO3, is deposited...