As the carbon nanotubes (CNTs) films are applied to the field emission cathodes in the vacuum devices, heat treatment in the range of 400°C–500°C is often conducted during the device sealing process, especially for glass-based devices. The annealing temperature effect on the field emission...

Polycrystalline silicon carbide (P-SiC) films containing SiC nanoparticles and Er were prepared by r.f. reactive magnetron co-sputtering technique with SiC and Er targets on low-temperature silicon (111) and silicon dioxide substrates with the mixed gas of pure argon, methane, and hydrogen....