Boron doped (B-doped) diamond films are deposited onto WC-Co inserts by HFCVD with the mixture of acetone, trimethyl borate (C3H9BO3) and H2. The as-deposited B-doped diamond films are characterized with scanning electron microscope (SEM), X-ray diffraction (XRD) spectroscopy, Raman...

In the present study, the finite volume method (FVM) is adopted to investigate the effect of gas outlet on the fluid field generated by a hot filament chemical vapor deposition (HFCVD) setup that is designed for the mass-production of diamond coated drills. The temperature field is calculated...

In the present study, the fluid field in a process of fabricating diamond coated cutting tools using the hot filament chemical vapor deposition (HFCVD) method is investigated using the finite volume method (FVM), in which the effects of the inlet height, gas initial velocity, inlet radius and...

HFCVD diamond films have been extensively applied on inner-hole surfaces of some wear resistant components as protective coatings, the mass production of which puts forward a high request to the HFCVD equipment. In this paper, adopting a typical kind of drawing die as the substrate, several...

Finite volume method (FVM) is adopted in the present investigation to simulate the temperature and reactant gas velocity distributions in hot filament chemical vapor deposition (HFCVD) diamond film growth inside holes, using a detailed 3D computational model well in accordance with the actual...

Si-doped diamond films with various Si concentrations are deposited on WC-Co substrates using HFCVD method, with the mixture of acetone, tetraethoxysilane (TEOS) and hydrogen as the reactant source. A variety of characterizations, including FE-SEM, AFM, Raman, XRD, surface profilometer and...

In the present study, a double-deck filament setup is proposed for the hot filament chemical vapor deposition (HFCVD) method and an optimization method is presented to determine its optimal geometry that is able to produce a highly uniform temperature field on the whole flute surface of...