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(Ga 1-x Fe x ) 2 O 3 thin films were grown on (0001)-Al 2 O 3 substrates with a partial O 2 pressure of 1.5×10 -6 torr and temperature of 700˚C by pulsed laser deposition. The incorporation of Fe into Ga 2 O 3 expands the lattice constant and causes a transformation from the monoclinic phase...
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