Nameki, Yuta; Bi, Te; Tsunoda, Jun; Niikura, Naoya; … - 2022
C-Si bonds are formed by boron-doped selective growth at the diamond-SiO 2 interface. Two-dimensional hole gas (2DHG) C …-Si diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) using C-Si bonded have low interfacial density of states … and high hole mobility can be expected. C-Si diamond MOSFET have properties comparable to 2DHG hydrogen-terminated (C …