The influence of the surrounding semiconducting matrix upon the optical response of embedded nano-objects (quantum dots) has been investigated. This system can be described by means of a hybrid model, where the full response is a combination of a macroscopic electrostatic response term and a...

Electron Raman scattering (ERS) is investigated in a free-standing semiconductor quantum wire of cylindrical geometry for two classes of materials CdS and GaAs. The differential cross section (DCS) involved in this process is calculated as a function of a scattering frequency and the radius of...

Due to their wurzite structure, GaN quantum wells and dots arecharacterized by large built-in piezoelectric fields.These induce a spatial separation between the confined electron andholes, thus favouring the formation of electric dipoles.Here, we theoretically investigate the effects of the...

We present an analytic calculation of the conductivity of pure graphene as a function of frequency ω, wave-vector k, and temperature for the range where the energies related to all these parameters are small in comparison with the band parameter γ≃3 eV, but much larger than the collision...

We calculate the effective dielectric tensor of a metal film penetrated by cylindrical holes filled with a nematic liquid crystal (NLC). We assume that the director of the NLC is parallel to the film, and that its direction within the plane can be controlled by a static magnetic field, via the...

We have investigated the photoluminescence (PL) properties of amorphous silicon nanoparticles (a-Si NPs) embedded in silicon nitride film (Si-in-SiN<Subscript>x</Subscript>) grown by helicon wave plasma-enhanced chemical vapor deposition (HWP-CVD) technique. The PL spectrum of the film exhibits a broad band...</subscript>