This paper has studied the electronic properties of multi-diluted magnetic semiconductor (DMS) layers Ga(1-x) MnxAs interposed between nonmagnetic GaAs layers. The asymmetry of confining potential on the transmission coefficient by tuning the temperature and the size of the (DMS) layers was...

The frequency dependence of the complex electrical impedance ( Z* ) and modulus ( M* ) of two types of semiconducting materials, is studied. These are Cu 5 In 9 Se 16 (CIS), an ordered defect compound of the I-III-VI 2 family and a novel bentonite clay system which is insulator at room...

In a small-area semiconductor the activity of just one single trap reveals discrete switching, which is usually referred to as a random telegraph signal (RTS). Such RTSs are attributed to the capture and emission of charge carriers by a single active trap located in an oxide layer. This activity...

Abstract ; Nickel oxide (NiO x ) is one of the most promising inorganic hole transport layers for perovskite solar cells (PSCs), due to its low cost, high hole mobility, and superior stability. However, the mismatched energy level and undesirable chemical reaction at the NiO x /perovskite...

Fluoride and silica contamination in water is a worldwide issue due to the wastewater discharge from semiconductor industry. Coagulation-ultrafiltration (UF) process is commonly used to treat semiconductor wastewater, but requires excessive amounts of coagulant/flocculant. In this study, an...