Showing 1 - 10 of 116
Both ferroelectric Na0.5Bi0.5TiO3 (NBT) and K0.5Bi0.5TiO3 (KBT) are considered as the best known lead-free materials. In this experiment, we prepared NBT and KBT thin films on Pt/TiO2/SiO2/Si substrates by metalorganic solution deposition. The structural properties and surface morphologies were...
Persistent link: https://www.econbiz.de/10011011167
Ce-doped Bi2Ti2O7 thin films have been successfully prepared on P-type Si substrates by a chemical solution deposition method. The structural properties of the films were studied by X-ray diffraction. The phase of Ce-doped Bi2Ti2O7 was more stable than that of Bi2Ti2O7 without Ce substitution....
Persistent link: https://www.econbiz.de/10005080575
Lead-free Bi0.5(Na0.4K0.6)0.5TiO3 films have been synthesized by a chemical solution deposition method and deposited on p-Si(111) substrate by spin coating. Powder of the precursor solution heated at 650°C was studied by infrared scattering spectroscopy. The structural characteristics and...
Persistent link: https://www.econbiz.de/10004971864
The effects of the radial electric field E/sub r/ on the bootstrap current in ATF-type configurations are studied with the Drift Kinetic Equation Solver (DKES). It is found that there is a range of E/sub r/ values over which the bootstrap current does not depend on E/sub r/. The effects of E/sub...
Persistent link: https://www.econbiz.de/10009436457
High quality Co-doped ZnO films with good reproducibility have been prepared under different oxygen partial pressure by radio-frequency magnetron sputtering. These films were characterized using numerous characterization techniques including X-ray diffraction, electrical transport, and...
Persistent link: https://www.econbiz.de/10010883163
In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at...
Persistent link: https://www.econbiz.de/10011011155
An undoped p-type nanocrystalline diamond (NCD) film was grown by an electron assisted hot filament chemical vapor deposition (EA-HFCVD) technology on an n-type single-crystalline Si substrate to fabricate p-NCD/n-Si heterojunction. The structure and morphology of the NCD film, which was...
Persistent link: https://www.econbiz.de/10005080565
Effects of thermal expansion coefficient (CTE) mismatch on structure and electrical properties of TiO2 film deposited on Si substrate by ion beam assistant electron beam evaporation have been investigated. Because of a high CTE mismatch between TiO2 film and Si substrate, microcracks appeared in...
Persistent link: https://www.econbiz.de/10005080587
The effect of boron weight percentage in the camphoric carbon target of pulsed laser deposition on the preparation of boron-doped amorphous carbon (a-C:B) films has been studied using standard measurement techniques. XPS results showed the a-C:B films bonding properties almost unchanged at lower...
Persistent link: https://www.econbiz.de/10005080607
The transparent c-axis oriented ZnO thin films have been prepared by sol–gel method using zinc acetate as cations source, 2-mrthoxiethanol as solvent and monoethanolamine as sol stabilizer. Film deposition was performed by dip coating technique at a withdrawal rate of 10 mm/min on quartz and...
Persistent link: https://www.econbiz.de/10005080611