A variational method and a memory function approach are adopted to investigate the electron mobility parallel to the interface for a model Al<Subscript>x</Subscript>Ga<Subscript>1-x</Subscript>As/GaAs heterojunction and its pressure effect by considering optical phonon modes (including both of the bulk longitudinal optical (LO) in the...</subscript></subscript>

Spin-dependent Floquet scattering theory is developed to investigate the photon-assisted spin-polarized electron transport through a semiconductor heterostructure in the presence of an external electric field. Spin-dependent Fano resonances and spin-polarized electron transport through a laser...

Tailoring thermoelectric materials for specific designs and applications has been gaining momentum during past three decades. Initially confined to conventional (bulk) framework an entirely new scenario emerged with inclusion of low-dimensional structures in the scheme of things. The paper...

We investigate the time-dependent dynamical behavior of electron transport in AlGaAs/GaAs double-barrier structures under a high-frequency radiation field. The effects of the radiation field with different amplitude and frequency on the real-time and mean current-voltage curves are taken into...