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High field fluid dynamical models for the transport of charge carriers in semiconductors

Anile, A.M.; Liotta, S.F.; Mascali, G. - In: Physica A: Statistical Mechanics and its Applications 297 (2001) 3, pp. 291-302

In this article we present a fluid dynamical model for the charge transport in semiconductors based on a recently found asymptotic solution of the semiconductor Boltzmann transport equation (BTE) for strong fields.

Persistent link: https://www.econbiz.de/10010871707

From the adiabatic piston to macroscopic motion induced by fluctuations

Piasecki, J.; Gruber, Ch. - In: Physica A: Statistical Mechanics and its Applications 265 (1999) 3, pp. 463-472

The controversial problem of the evolution of an isolated system with an internal adiabatic wall is investigated with the use of a simple microscopic model and the Boltzmann equation. In the case of two infinite volume one-dimensional ideal fluids separated by a piston whose mass is equal to the...

Persistent link: https://www.econbiz.de/10010871744

Nonlocal Lagrange formalism in the thermodynamics of irreversible processes: variational procedures for kinetic equations

Sievers, B.; Anthony, K.-H. - In: Physica A: Statistical Mechanics and its Applications 225 (1996) 1, pp. 89-128

This paper is concerned with generalizations of the known local Lagrange formalism of first order. It will be applied to kinetic equations like the Fokker-Planck equation and the Boltzmann equation. In the latter case nonlocal methods are necessary from the very beginning. Nevertheless, in the...

Persistent link: https://www.econbiz.de/10010872818

Electron dynamics in nanoscale transistors by means of Wigner and Boltzmann approaches

Sellier, J.M.; Amoroso, S.M.; Nedjalkov, M.; Selberherr, S. - In: Physica A: Statistical Mechanics and its Applications 398 (2014) C, pp. 194-198

We present a numerical study of the evolution of a wave packet in a nanoscale MOSFET featuring an ‘atomistic’ channel doping. Our two-dimensional Monte Carlo Wigner simulation results are compared against classical Boltzmann simulation results. We show that the quantum effects due to the...

Persistent link: https://www.econbiz.de/10010744313

An event bias technique for Monte Carlo device simulation

Kosina, H.; Nedjalkov, M.; Selberherr, S. - In: Mathematics and Computers in Simulation (MATCOM) 62 (2003) 3, pp. 367-375

In Monte Carlo (MC) simulations of semiconductor devices it is necessary to enhance the statistics in sparsely populated regions of interest. In this work the Monte Carlo method for stationary carrier transport, known as the Single-Particle MC method, is considered. It gives a solution to the...

Persistent link: https://www.econbiz.de/10010749216

The Monte Carlo method for semi-classical charge transport in semiconductor devices

Kosina, H.; Nedjalkov, M. - In: Mathematics and Computers in Simulation (MATCOM) 55 (2001) 1, pp. 93-102

A brief review of the semi-classical Monte Carlo method for semiconductor device simulation is given, covering the standard Monte Carlo algorithms, variance reduction techniques, the self-consistent solution, and the physical semiconductor model including band structure and scattering...

Persistent link: https://www.econbiz.de/10010749547

On time counting procedures in the DSMC method for rarefied gases

Rjasanow, Sergej; Wagner, Wolfgang - In: Mathematics and Computers in Simulation (MATCOM) 48 (1998) 2, pp. 151-176

The DSMC (direct simulation Monte Carlo) method for rarefied gas dynamics is studied. The behaviour of the underlying stochastic particle system is determined by three main components – the time step between subsequent collisions, the random mechanism for the choice of the collision partners,...

Persistent link: https://www.econbiz.de/10010749555

Transport coefficients of d-dimensional inelastic Maxwell models

Santos, Andrés - In: Physica A: Statistical Mechanics and its Applications 321 (2003) 3, pp. 442-466

Due to the mathematical complexity of the Boltzmann equation for inelastic hard spheres, a kinetic model has recently been proposed whereby the collision rate (which is proportional to the relative velocity for hard spheres) is replaced by an average velocity-independent value. The resulting...

Persistent link: https://www.econbiz.de/10010588469

Generalized Pearson distributions for charged particles interacting with an electric and/or a magnetic field

Rossani, A.; Scarfone, A.M. - In: Physica A: Statistical Mechanics and its Applications 388 (2009) 12, pp. 2354-2366

The linear Boltzmann equation for elastic and/or inelastic scattering is applied to derive the distribution function of a spatially homogeneous system of charged particles spreading in a host medium of two-level atoms and subjected to external electric and/or magnetic fields. We construct a...

Persistent link: https://www.econbiz.de/10010588498

Entropy, entropy flux and entropy rate of granular materials

Kremer, Gilberto M. - In: Physica A: Statistical Mechanics and its Applications 389 (2010) 19, pp. 4018-4025

The aim of this work is to analyze the entropy, entropy flux and entropy rate of granular materials within the … frameworks of the Boltzmann equation and continuum thermodynamics. It is shown that the entropy inequality for a granular gas … identified as the entropy density rate. From the knowledge of a non-equilibrium distribution function–valid for processes closed …

Persistent link: https://www.econbiz.de/10010588566