Showing 11 - 20 of 187
We deposited amorphous Bi films with a thickness between 3 and 6.5 nm at 4.2 K on top of previously deposited Co clusters having a mean size of ∼4.5 nm. The Co cluster layers thickness was between 2.3 and 5 nm. In-situ electrical transport measurements were performed between 2 and 100 K....
Persistent link: https://www.econbiz.de/10010992467
Positron annihilation spectroscopy was applied to investigate the nature and thermal behavior of defects induced by Cu diffusion in Zn-doped p-type GaAs crystals. Cu atoms were intentionally introduced in the GaAs lattice through thermally activated diffusion from a thin Cu capping layer at 1100...
Persistent link: https://www.econbiz.de/10010992476
Field-, temperature- and angle-dependent Fourier amplitude of de Haas-van Alphen (dHvA) oscillations are calculated for compensated two-dimensional (2D) metals with textbook Fermi surface (FS) composed of one hole and two electron orbits connected by magnetic breakdown. It is demonstrated that,...
Persistent link: https://www.econbiz.de/10010992480
We investigate the dynamics of charge carriers hopping from one trap to the other trap along an n-type semiconductor layer consisting of a spatially nonhomogeneous trap distribution of depth Φ assisted by thermal noise. The trap profile is denser at the center and decays as one moves outward....
Persistent link: https://www.econbiz.de/10010992485
We present the exact solution, obtained by means of the Transfer Matrix (TM) method, of the 1D Hubbard model with nearest-neighbor (NN) and next-nearest-neighbor (NNN) Coulomb interactions in the atomic limit (t = 0). The competition among the interactions (U, V <Subscript>1</Subscript>, and V <Subscript>2</Subscript>) generates a plethora...</subscript></subscript>
Persistent link: https://www.econbiz.de/10010992488
The charge storage behavior of nanostructures based on Si<Subscript>1−x </Subscript>Ge<Subscript> x </Subscript> (0 ≤ x ≤ 1) nanocrystals (NCs) in an Al<Subscript>2</Subscript>O<Subscript>3</Subscript> matrix was investigated. The structures have been grown by RF magnetron sputtering and subsequently annealed at temperatures ranging from 700 °C to 1000 °C for 30 min in nitrogen...</subscript></subscript></subscript></subscript>
Persistent link: https://www.econbiz.de/10010992495
We reveal that two-dimensional semiconductors with Rashba spin-orbit interaction (R2DG) exhibit exceptionally strong nonlinear optical response (NOR) in the terahertz frequency regime. The spin-split of the parabolic energy band in R2DG allows strong multiple-photon process to occur via...
Persistent link: https://www.econbiz.de/10010992496
We calculate real-space static correlation functions of spin and charge degrees of freedom of the one-dimensional Hubbard model that are described by operators related to singly occupied sites with spin up or spin down (spinons) and unoccupied or doubly occupied sites (η-spinons). The spatial...
Persistent link: https://www.econbiz.de/10010992499
Local properties of the XSiP<Subscript>2</Subscript> (X=Be, Mg, Cd, Zn and Hg) compounds are revisited through the partition of static thermodynamic properties under pressure. We pay attention to the metallization that occurs when the investigated compounds undergo a phase transition from chalcopyrite to the NaCl...</subscript>
Persistent link: https://www.econbiz.de/10010992502
We employ an elastic line model to investigate the steady-state properties and non-equilibrium relaxation kinetics of magnetic vortex lines in disordered type-II superconductors using Langevin molecular dynamics (LMD). We extract the dependence of the mean vortex line velocity and gyration...
Persistent link: https://www.econbiz.de/10010992504