Concurrent Enhancement of Charge Separation and Hole Transportation in P-Cuo/N-Ingan Heterostructure Towards High Photoelectrochemical Properties
III-Nitride semiconductors, mainly indium gallium nitride (InGaN), are the cornerstone of photoelectrochemical (PEC) hydrogen evolution. However, InGaN has limited practical applications owing to its substantial number of interface states and defects. Penurious electron transport, small diffusion lengths, and carrier recombination negatively affect PEC performance. To overcome these bottlenecks, we designed a p -CuO/n-InGaN nanorods (NRs) photoelectrode. In this work, we report an enhanced PEC using p -CuO/n-InGaN NRs, which shows a current density of 467.32 µA/cm 2 at 1.66 V vs. a reversible hydrogen electrode (RHE) under simulated solar light (λ= 365 nm) for p-CuO/n-InGaN NRs, which is approximately three times that of pristine InGaN NRs. Also, p-CuO/n-InGaN NRs manifested a current density of 183.97 µA/cm 2 under visible light of 405 nm at 1.66 V vs. RHE. The time-resolved photoresponse characteristics revealed that both photoelectrodes were rapidly responsive, whereas the p-CuO/n-InGaN NR heterostructure showed a significantly high photocurrent density. Our findings highlight the possibility of implementing this idea for the design and production of high-performance PEC electrodes
Year of publication: |
[2022]
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Authors: | Thota, Chandrakalavathi ; Yang, Ju Hyun ; Bak, Na-Hyun ; Nam, Dong-Jin ; Reddeppa, Maddaka ; Sohn, Youngku ; Kim, Moon-Deock |
Publisher: |
[S.l.] : SSRN |
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