Contactless electron effective mass determination in GaInNAs/GaAs quantum wells

The electron effective masses in n-type modulation doped Ga<Subscript>0.7</Subscript>In<Subscript>0.3</Subscript>N<Subscript> y </Subscript>As<Subscript>1−y </Subscript>/GaAs quantum wells with nitrogen mole fractions of y=0.004 and 0.010 were investigated experimentally. Two experimental techniques: magnetic field dependent photoluminescence measurements and phonon-plasmon coupled-mode line-shape analysis of vibrational spectroscopy measurements, were employed in the investigations. In the first technique, the effective masses of the electrons have been determined from the diamagnetic energy shift dependencies up to 11 T. The vibrational properties of the samples were studied using Raman scattering spectroscopy at room temperature. The effective masses obtained from both two techniques are in good agreement with the current results in the literature. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2013