EFFECT OF Bi SURFACTANT IN THE HETEROEPITAXIAL GROWTH OF Co ON Cu SURFACES
We have investigated the effect of Bi on the heteroepitaxial growth of Co on Cu by reflection high-energy electron diffraction (RHEED) measurements. It was found that Bi enhanced the layer-by-layer growth of Co on the Cu(111) surfaces at 100°C. The dependence of the growth on Bi layer thickness suggested that there existed a suitable amount of Bi surfactant layer that enhanced smoother layered growth. On the contrary, for the case of Co growth on Cu(100), Bi depressed the layer-by-layer growth of Co on Cu(100). The surface segregation effect of Bi was also studied by Auger electron spectroscopy (AES).
Year of publication: |
2006
|
---|---|
Authors: | KAMIKO, MASAO ; CHIHAYA, HIROAKI ; SUGIMOTO, WATARU ; YAMAMOTO, RYOICHI ; OH, SANGMUN ; XU, JUNHUA ; KOJIMA, ISAO |
Published in: |
Surface Review and Letters (SRL). - World Scientific Publishing Co. Pte. Ltd., ISSN 1793-6667. - Vol. 13.2006, 02, p. 201-207
|
Publisher: |
World Scientific Publishing Co. Pte. Ltd. |
Subject: | Cobalt | thin films | surface segregation | surfactant | MBE | RHEED | AES |
Saved in:
Online Resource
Saved in favorites
Similar items by subject
-
SIMS STUDIES OF Cl-DOPED ZnSe EPILAYERS GROWN BY MBE
GARD, F. S., (2006)
-
CHEN, YU, (2007)
-
MUN, B. S., (2006)
- More ...
Similar items by person
-
SPARQL-based set-matching for semanctic grid resource selection
Pahlevi, Said Mirza, (2008)
- More ...