Growth and Characterization of (Ga1-Xfex)2o3 Thin Films by Pulsed Laser Deposition for Wide-Bandgap and Spintronics Applications

(Ga 1-x Fe x ) 2 O 3 thin films were grown on (0001)-Al 2 O 3 substrates with a partial O 2 pressure of 1.5×10 -6 torr and temperature of 700˚C by pulsed laser deposition. The incorporation of Fe into Ga 2 O 3 expands the lattice constant and causes a transformation from the monoclinic phase to gamma phase for x ≥ 0.1. Surface analysis using atomic force microscopy shows that Fe is also responsible for controlling grains and the migration of adatoms with the increasing Fe concentration. Optical transmission measurements show that with increasing Fe content the absorption edge moves toward longer wavelengths with no intermediate absorption