In-Situ Study of Dynamics of Refractive Index Changes in Silicon Devices Induced by Uv-Light Irradiation

Silicon photonics has been extremely studied for optical communications, interconnects, and ranging, by providing small-footprint, high-performance, and mass-producible optoelectronic components integrated on a chip. For the photonic packaging of silicon devices, ultraviolet (UV) curing techniques have been widely utilized. Meanwhile, silica cladding absorption to UV light could alter its refractive index (RI), affecting the optical testing of silicon devices during or after the device packaging. Therefore, it is significant to characterize the dynamics of RI changes in silicon devices induced by UV-light irradiation. However, the in-situ characterization of such devices is seldom explored. Here, we studied the influence of UV-light irradiation on silicon photonic devices by probing resonant wavelength shifts of a racetrack microring resonator. Specifically, we studied the temporary variation of the resonant wavelength and its recovery time under different conditions of UV-light exposure time. Experimental results show that with a UV energy of 21 J/cm 2 , the resonator had a maximum resonant wavelength shift of 0.31 nm, corresponding to an effective RI change of 0.0009 and recovering time of 95 minutes. Based on the experimental results, we compressively analyzed and compared RI changes induced by plasmon dispersion effect, thermal optical effect and photon-induced silica densification effect. Our study is expected to provide useful guidelines for in-situ silicon photonic testing and packaging