Influence of high energy electron irradiation on the characteristics of polysilicon thin film transistors
The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO2 layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated changes of gate oxide parameters the gate oxide tunneling conduction and transistor characteristics were studied. At MeV dose of 6×10<Superscript>13</Superscript> el/cm<Superscript>2</Superscript>, a negligible degradation of the transistor properties was found. A significant deterioration of the electrical properties of PSTFTs at MeV irradiation dose of 3×10<Superscript>14</Superscript> el/cm<Superscript>2</Superscript> was observed. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2006
Year of publication: |
2006
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Authors: | Aleksandrova, P. V. ; Gueorguiev, V. K. ; Ivanov, Tz. E. ; Kaschieva, S. |
Published in: |
The European Physical Journal B - Condensed Matter and Complex Systems. - Springer. - Vol. 52.2006, 3, p. 355-359
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Publisher: |
Springer |
Subject: | 61.80.Fe Electron and positron radiation effects | 72.20.-i Conductivity phenomena in semiconductors and insulators | 73.20.At Surface states | band structure | electron density of states |
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