Mesoscopic resistive switch: non-volatility, hysteresis and negative differential resistance
We show how a simple model nanoswitch can perform as a memory resistor. Its resistance is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the presence of Joule’s heat dissipation. In the case of a single potential minimum, we observe hysteresis of the resistance at finite applied currents and negative differential resistance. For two (or more) minima the switching mechanism is non-volatile, meaning that the memristor can switch to a resistive state of choice and stay there. Moreover, the noise spectra of the switch exhibit 1/f <Superscript>2</Superscript> → 1/f crossover, in agreement with recent experimental results. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2013
Year of publication: |
2013
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Authors: | Sergey E. Savel’ev ; Marchesoni, Fabio ; Bratkovsky, Alexander M. |
Published in: |
The European Physical Journal B - Condensed Matter and Complex Systems. - Springer. - Vol. 86.2013, 12, p. 1-6
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Publisher: |
Springer |
Subject: | Mesoscopic and Nanoscale Systems |
Saved in:
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