On a Petrov–Galerkin method for the electrical and thermal behaviour of semiconductor devices in two dimensions
We consider the equations governing the electrical and thermal behaviour of a semiconductor device in two dimensions. A non-standard Petrov-Galerkin method is used to obtain a discretisation of the equations for stationary problems. The resulting scheme is a generalization to the two-dimensional case and to the full set of equations of the well-known Scharfetter-Gummel scheme, which is the most successful discretisation for one-dimensional problems. The dependent variables used are the carrier densities, the electrostatic potential and the absolute temperature.
Year of publication: |
1987
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Authors: | Miller, John J.H. |
Published in: |
Mathematics and Computers in Simulation (MATCOM). - Elsevier, ISSN 0378-4754. - Vol. 29.1987, 5, p. 367-372
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Publisher: |
Elsevier |
Saved in:
Online Resource
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