p-GaN/n-Si HETEROJUNCTION PHOTODIODES

PN photodiodes, as an alternative form of photodetectors, is based on carrier production in the high-field junction region, and it has a response time considerably faster than that of a photoconductor and is typically in the order of nanoseconds. Photodetectors operating in the short wavelength ultraviolet (UV) region are important devices that can be used in various commercial and military applications. In the present work, we fabricated the p-GaN/n-Si heterojunction photodiode to observe the photoelectric effects. From the results, the current–voltage characteristics of the device show the typical rectifying behavior of heterojunctions. The UV photocurrent measurement was performed using an Hg-lamp under a reverse bias.