The effects of ionizing radiation on the functional and parametric performance of NMOS static RAMs

The degradation of both the functional and electrical parameter performance of integrated circuits has been under investigation for a number of years. Aims to demonstrate that statistical methods may be used to determine physical changes in these devices, rather than the time‐consuming and costly procedures of physical failure analysis. In addition, draws a comparison between the functional tests and the parametric tests. The data were obtained by stressing statistical samples of TMS2114L NMOS static RAMs to varying total doses of ionizing radiation. Presents and discusses the results obtained from these tests and suggests statistical and mathematical models to estimate performance degradation.