The thermoelectric power, the dark electrical resistivity and the grain boundary potential barrier in CdIn2Se4 thin films

The thermoelectric power (Seebeck coefficient S) was measured for several preannealed CdIn2Se4 thin films of different thicknesses. The thermoelectric power measurements indicate that the preannealed CdIn2Se4 thin films are n-type semiconductors. The thermoelectric was utilized to calculate the free charge carrier concentration in the temperature range of 298–453 K.

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Year of publication:	1996
Authors:	Abdel Hady, D. ; El-Shazly, A.A. ; Soliman, H.S. ; El-Shazly, E.A.
Published in:	Physica A: Statistical Mechanics and its Applications. - Elsevier, ISSN 0378-4371. - Vol. 226.1996, 3, p. 324-329
Publisher:	Elsevier
Subject:	Thermoelectric power \| Thin films \| Grain boundaries \| Cadmium compounds

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Type of publication:	Article
Source:	RePEc - Research Papers in Economics

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