Unveiling the Mechanism of as Doping in High-Endurance Threshold Switching Materials
Phase change memory (PCM) is usually integrated with the ovonic threshold switching (OTS) selector in the high-density memory chips. The As doping is a commercialized technology in the OTS materials to enhance their performance, but the understanding of the OTS behavior and the influence from such a doping strategy are still inadequate. Here we have explored the influence of As doping on the structural, electronic and dynamics properties of amorphous (a-) GeSe. The results reveal that As atoms tend to form the strong bonds with Ge atoms. The local clusters deviate more from perfect octahedron and the 5-fold rings are increased when adding As atoms to a-GeSe. All of Ge, As and Se elements contribute to the mid-gap states, which are believed to be responsible for the OTS behavior. Moreover, the atomic mobility in As doped a-GeSe (i.e., a-GeAsSe) is notably reduced, rendering a-GeAsSe ultrahigh endurance. In addition, the similar characteristics are observed in a-GeAsS, suggesting that As doping may also improve the cycling performance of a-GeS. Our studies systematically illustrate the effect of As doping on chalcogenide glass, which deepens the understanding of the structural and electronic properties for OTS materials, and contributes to the design and application of memory devices
Year of publication: |
[2022]
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Authors: | Gu, Rongchuan ; Xu, Meng ; Qiao, Chong ; Wang, C. Z. ; Ho, Kai-Ming ; Wang, Songyou ; Xu, Ming ; Miao, Xiangshui |
Publisher: |
[S.l.] : SSRN |
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freely available
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