The structure and optical properties of InN thin film grown on 6H-SiC by reactive radio frequency magnetron sputtering were investigated. X-ray diffraction measurement shows that the deposited InN film has (101) preferred growth orientation and wurtzite structure. Atomic force microscopy results...

In this work, a series of polycrystalline ZnO samples have been synthesized from Zn thin films deposited on Si(100) substrates by using thermal oxidation technique. The ZnO thin film samples grown by this technique were then characterized by a variety of structural and optical characterization...

In this work, we report the morphology and optical properties of zinc oxide (ZnO) layers prepared by dry thermal oxidation at different annealing conditions. Morphology studies using scanning electron microscope (SEM) show that the amount of nanowires and nanosheets increases with the...

This article reports the use of plasma-assisted molecular beam epitaxy (MBE) to grow AlN on Si(111) substrate at 850°C under UHV conditions for 15, 30, and 45 min. The films were characterized by high-resolution X-ray diffraction (HR-XRD) and micro-Raman spectroscopy. XRD measurement revealed...

In this paper, theoretical study on the surface phonon–polariton (SPP) modes of wurtzite (α-) structure indium nitride (InN) semi-infinite crystal is presented. Based on an anisotropy model, the surface polariton (SP) dispersion curve of α-InN is simulated. The characteristics of this...

Porous silicon (PS) samples were prepared by electrochemical anodic etching of n-type (111) silicon wafers in HF solution. The structural, optical, and chemical features of the PS were investigated in terms of different etching durations. The porous samples were investigated by scanning electron...

High-quality aluminum nitride (AlN) layers with full width at half maximum (FWHM) values of 11 arcmin were grown by plasma-assisted molecular-beam epitaxy on Si (111) substrates. AlN nucleation layers are being investigated for the growth of GaN on Si. Growth using AlN buffer layers leads to...

PN photodiodes, as an alternative form of photodetectors, is based on carrier production in the high-field junction region, and it has a response time considerably faster than that of a photoconductor and is typically in the order of nanoseconds. Photodetectors operating in the short wavelength...