The electroluminescence (EL) studies on the aluminum-doped nanoporous silicon (NPSi:Al) have been conducted. Nanoporous silicon (NPSi) layers have been prepared by anodically etching the unpolished p-type Si[100] wafer with surface resistivity of 4–8 Ω cm-1 in hydrofluoric solution at 1:1...

Boron-doped hydrogenated amorphous carbon (a-C:B:H) thin films have been deposited by radio frequency plasma-enhanced chemical vapor deposition (r.f. PECVD) with a frequency of 13.56 MHz at room temperature using pure methane as a precursor of carbon source mixed with hydrogen (H2) as a carrier...

We have studied the influence of the methane gas (CH4) flow rate on the composition and structural and electrical properties of nitrogenated amorphous carbon (a-C:N) films grown by surface wave microwave plasma chemical vapor deposition (SWMP-CVD) using Auger electron spectroscopy, X-ray...

Nitrogenated diamond-like carbon films have been deposited on glass and p-type Si (100) substrates by radio frequency (r.f.) plasma-enhanced chemical vapor deposition (PECVD) with a frequency of 13.56 MHz at room temperature using CH4 as precursor of carbon source and H2 as a carrier gas. The...

Amorphous carbon nitride (a-CNx) films were deposited on quartz substrates by newly developed surface wave microwave plasma chemical vapor deposition (SWMP-CVD) of alcohol camphoric carbon plasma source at room temperature. Then the a-CNx films were heat-treated at various annealing temperatures...

Nitrogen doped amorphous carbon (a-C:N) thin films were deposited on silicon and quartz substrates by microwave surface-wave plasma chemical vapor deposition (SWMP-CVD) technique at low temperatures (100°C). We used argon (Ar), camphor dissolved in alcohol, and nitrogen (N) as carrier, source,...

The tetrahedral carbon (ta-C) and boron doped amorphous carbon (a-C:B) thin films have been grown by pulsed laser deposition. The respective effects of diamond percentages by weight in the target (Dwt%) and boron percentages by weight in the camphoric carbon target (Bwt%), on the tetrahedral...

The effect of boron weight percentage in the camphoric carbon target of pulsed laser deposition on the preparation of boron-doped amorphous carbon (a-C:B) films has been studied using standard measurement techniques. XPS results showed the a-C:B films bonding properties almost unchanged at lower...

The transparent c-axis oriented ZnO thin films have been prepared by sol–gel method using zinc acetate as cations source, 2-mrthoxiethanol as solvent and monoethanolamine as sol stabilizer. Film deposition was performed by dip coating technique at a withdrawal rate of 10 mm/min on quartz and...

Surface morphology, deposition rate, bonding composition, structural, optical and electrical properties of XeCl excimer pulsed laser deposited amorphous carbon nitride (a-CNx) films using camphoric carbon (C10H16O) target in 0.8 Torr nitrogen (N) gas ambient as a function of laser fluences (LF)...