Aleskandrova, P. V.; Gueorguiev, V. K.; Ivanov, Tz. E.; … - In: The European Physical Journal B - Condensed Matter and … 52 (2006) 4, pp. 453-457
Leakage currents through Al/ZrO<Subscript>2</Subscript>/SiO<Subscript>2</Subscript>/n-Si metal-insulator-semiconductor (MIS) capacitors were studied. Thin SiO<Subscript>2</Subscript> films were chemically grown on monocrystalline phosphorous doped silicon wafers. Zirconia films with thicknesses of 15 and 50 nm were deposited by radio frequency (rf) magnetron...</subscript></subscript></subscript>
