Aleksandrova, P. V.; Gueorguiev, V. K.; Ivanov, Tz. E.; … - In: The European Physical Journal B - Condensed Matter and … 52 (2006) 3, pp. 355-359
The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion...
